Process Solutions for GaN and SiC Power Semiconductor Devices

Process Solutions for Wide Band Gap Power Semiconductor Devices

The potential energy efficiency savings from the adoption of wide band gap power semiconductor devices based on GaN or SiC has lead to significant research and development that is now beginning to be realised in commercially available devices.

Many technical challenges have been addressed but further research is still on-going into higher performance lower cost devices.

Talks:

• Plasma etch and deposition processes for GaN and SiC power semiconductor devices
  Speaker: Chris Hodson, Oxford Instruments Plasma Technology
• Silicon Compatible GaN Power Electronics
  Speaker: Professor Iain Thayne, University of Glasgow

The first talk addresses process solutions available today and the second talk will outline research into addressing the challenges of the next generation of devices.

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Speakers

Chris Hodson, Product Manager, Power Semiconductor and ICT devices at Oxford Instruments Plasma Technology

Professor Iain Thayne, Professor Ultrafast Systems (Electronic and Nanoscale Engineering), The University of Glasgow

Read their biographies

Hosted by Power Electronics World