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PACE. PERFORMANCE. PLASMA.

Atomfab delivers fast, low damage, low CoO production plasma ALD processing for GaN power and RF devices.

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PACE

Atomfab is the fastest remote plasma production ALD system on the market.


SOLUTIONS FOR YOUR PRODUCTION NEEDS

  • Competitive CoO
  • Quick, easy maintenance
  • Excellent film uniformity
  • High material quality
  • Low substrate damage
  • Faster cycles times, high throughput
  • Clusterable and automated wafer handling
Atomfab 3 System Cluster

PERFORMANCE

Atomfab's ALD technology offers precisely controlled ultra‑thin films for advanced applications on the nanometre scale, with conformal coating of sensitive substrates structures.


PROCESS BENEFITS FOR PASSIVATION OF POWER & RF DEVICES

  • Guaranteed processes setup by our engineers
  • Lifetime process support for additional/new processes
  • Low-damage plasma processing
  • High quality deposition with low film contamination
  • Low particle levels
  • Short plasma exposure times enabling high throughput
  • Plasma surface pre-treatments


ADVANTAGES OF PLASMA ALD FOR GaN, POWER & RF DEVICES

  • With plasma pre-treatment prior to deposition to enhance interface quality
  • Low damage, uniform deposition
  • Remote plasma ALD with controlled ion energy from near zero to 30 eV
  • ALD passivation, gate dielectric by Al2O3 films.

Read more about how ALD can optimise GaN power devices in our white paper.

GaN HEMTs

GaN HEMT

Increased throughput & improved uniformity to bring remote plasma ALD to production.

PLASMA

Revolutionary plasma source: Atomfab uses a patent pending remote source specifically designed for atomic scale processing.

  • Low damage for sensitive substrates for maximum device performance
  • Fast cycle times and reliablity with uniform plasma exposure and film deposition
  • Short plasma times (250ms) enabled by patent-pending AMU
  • Short strike time (80ms) for high throughput
  • Reproducible strike time and low reflected power for high yield
Atomfab demonstrates excellent ALD uniformity on substrates
Plasma ALD Al<sub>2</sub>O<sub>3</sub> at 300 °C
Specification
Within wafer thickness uniformity <±1.0%
Wafer-to-wafer thickness repeatability <±1.0%
Breakdown voltage ≥7.0 MV/cm
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GLOBAL CUSTOMER SUPPORT

Oxford Instruments is committed to providing a comprehensive, flexible and reliable global customer support. We offer excellent quality service throughout the life of your system.

  • Remote diagnostics software provides quick and easy fault diagnosis and resolution
  • Support contracts are available to suit the budget and situation
  • Global spares in strategic locations for quick response

FIND OUT MORE

WHITE PAPER:
ALD & ALE FOR GaN HEMT POWER ELECTRONICS

New GaN power electronics are being developed for power conversion and delivery. The high mobility and breakdown voltage of GaN make it an ideal material for power devices. There are several strategies to create such devices and using recess etching of the AlGaN barrier is a prominent one. Furthermore, gate dielectric layers are desired to limit leakage currents.

READ NOW

WEBINAR:
GATE DIELECTRICS FOR GaN DEVICES WITH ATOMFAB ALD

Watch this webinar from July 2019 anytime on-demand. Our ALD expert, Dr Aileen O'Mahony gives a masterclass in ALD for GaN. We look at how you can achieve excellent uniformity, optimised process conditions for low substrate damage, high material quality for superior device performance and conformal deposition. The webinar also includes an introduction to the Atomfab ALD system.

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