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Hafnium Dioxide 

Hafnium Dioxide HfO2 is a -k dielectric used for the gate insulator in integrated circuits. HfO2 may be deposited using the following process types: Atomic Layer Deposition (ALD) and Reactive Ion Beam Deposition (RIBD)

quality and damage, even at deposition .

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Process expertise applied to demonstrate competitive results with excellent repeatability.

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