Hafnium Dioxide HfO2 is a -k dielectric used for the gate insulator in integrated circuits. HfO2 may be deposited using the following process types: Atomic Layer Deposition (ALD) and Reactive Ion Beam Deposition (RIBD)
quality and damage, even at deposition .
Process expertise applied to demonstrate competitive results with excellent repeatability.
© 牛津仪器 2024