RIE是一种操作简单且经济实用的通用等离子体刻蚀手段。单射频等离子体源同时决定了离子密度和能量。
RIE 特点:
可刻蚀多种材料,包括:
PlasmaPro 80 |
PlasmaPro 800 |
PlasmaPro 100 | ||
Electrode size | 240mm | 460mm | 240mm | |
Loading | Open load |
Load locked or cassette | ||
Substrates | Up to 240mm |
Up to 460mm |
200mm with carriers options available for multi-wafers or small pieces | |
MFC controlled gaslines | 8 or 12 line gas box available | |||
Wafer stage temperature range | -150°C to 400°C |
10°C to 80°C | -150°C to 400°C | |
He Back side cooling option | Yes | No | Yes | |
ICP Option | Yes | No | Yes | |
Focused Plasma | Yes | No |