2D Materials

• 600°C - 900°C
• Load-locked system offers higher throughput, as no cooling of the growth chamber is required to exchange samples
• He purge gas is required for the process
• Nucleation depends on the underlying substrate and C-source combination (Carbon, 2013, Vol. 58, 59–65)

Direct growth of nanocrystalline on dielectric substrates using plasma enhanced chemical vapour deposition.

• >900°C

In situ growth of  Molybdenum Disulphide (MoS₂) heterostructures

We offer CVD/PECVD/Remote plasma (ICP) CVD systems equipped with precursor vapour delivery modules for the growth of two dimensional layers and heterostructures of materials like , MoS₂, WS₂ etc. 

This is a three step process:

• Step 1: Grow on Cu
• Step 2: Transfer from Cu on to SiO₂
• Step 3: Grow MoS₂ on transferred on SiO₂

Process features:

• >900°C

• Formation of a single layer of MoS₂ confirmed by Raman
• Deposition time is critical to ensure that a complete monolayer of MoS₂ is formed
• of MoS₂ deposition on and its quality is critical for stability of the during MoS₂ process

This specification is issued for Boron Nitride obtained through Chemical Vapour Deposition (CVD) processes. For the purpose of process demonstration, B₂H₆ is used as Boron source and NH₃ as the Nitrogen sources on Cu/Ni foils as catalyst substrates.

• >900°C

Growth of MoS₂ and related Metal Dichalcogenides

We offer PECVD systems equipped with precursor vapour delivery modules for the growth of two dimensional layers of materials like MoS₂, WS₂ etc.

Excellent thickness control with defects and strong  photoluminescence  

quality MoS₂:

• shows defined step height and smooth uniform
• Raman indicates one mono-layer is deposited with characteristic peaks spaced 21.1cm-¹ apart