Gallium Antimonide (GaSb) is a compound whose proporties make it well suited for Infrared detectors and related devices. It can be etched using Inductively Coupled Plasma (ICP), Reactive Ion Etching (RIE) or Ion Beam Etch (IBE).
- As a substrate for power devices it is robust, lightweight and able to transfer heat from the active region better than any other whilst tolerating applied voltages.
- It is a suitable replacement for silicon in MEMS devices where wear and bio-compatibility are a concern and can be combined with piezo- materials like AlN to form SAW devices. Its optical absorption is across the visible spectrum, which combined with a refractive index allows it to be used for applications like waveguiding.
- The leading candidate for processing, where NV centres can be interrogated to give about the states.