Aluminium gallium nitride (AlGaN) is a that is growing in importance with it's use in the next generation of RF Devices. AlGaN is a hard and can be dry etched with either photoresist or hard mask using Inductively Coupled Plasma (ICP) and Reactive Ion Etching (RIE).
Process expertise applied to demonstrate excellent roughness with damage and optimised etching rate.
Anisotropic profile is achieved at competitive etching rate.
Process has been optimised to provide minimum damage to crystal structure. This technique allows extremely accurate control of etching depth with excellent roughness and even smoothing .
© 牛津仪器 2021