ALE是一种先进的刻蚀技术,可以针对较浅的微结构进行出色的深度控制。 随着器件微结构尺寸越来越小,要达到器件的更高性能可以通过ALE技术所具有的精度来实现。
Read our article in Compund Semiconductor
Written by Dr Mike Cooke and Dr Andy Goodyear for Compound Semiconductor magazine
Atomic layer etching promises to improve the quality of GaN-based HEMTs and eradicate the damage associated with high etching rates
25nm wide Si trenches etched to 110nm depth by ALE, HSQ mask still in place