原子层刻蚀（ALE）

ALE是一种先进的刻蚀技术，可以针对较浅的微结构进行出色的深度控制。随着器件微结构尺寸越来越小，要达到器件的更高性能可以通过ALE技术所具有的精度来实现。

Atomic layer etching: What for?

Read our article in Compund Semiconductor

Written by Dr Mike Cooke and Dr Andy Goodyear for Compound Semiconductor magazine

Atomic layer etching promises to improve the quality of GaN-based HEMTs and eradicate the damage associated with high etching rates

25nm wide Si trenches etched to 110nm depth by ALE, HSQ mask still in place