Tantalum Pentoxide (Ta2O5), also known as tantalum(V) oxide, is used in modern capacitors and as a -k dielectric in DRAM capacitors. It can be etched using Inductively Coupled Plasma (ICP) and Reactive Ion Etching (RIE). Ta2O5 may be deposited using Atomic Layer Deposition (ALD).
Good etching rate.
quality and damage, even at deposition .
Excellent stoichiometry with competitive deposition rate.
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