Silicon Carbide (SiC) has electronic and physical properties that offers superior performance devices for high power applications. It is also used as a substrate to grow high quality Gallium Nitride (GaN) enabling fast swtiching, high power RF devices. SiC may be etched using Inductively Coupled Plasma Etching (ICP) and deposited using Plasma Enhanced Chemical Vapour Deposition (PECVD) or Inductively Coupled Plasma Chemical Vapour Deposition (ICPCVD).
Process expertise applied to demonstrate high etching rate with defect free surface. Excellent selectivity to underlying layers achieved in Via etch for RF device. Good control of profile with no trenching demonstrated in features etch for Power devices.More on ICP Etching 了解更多信息