Plasma Enhanced Chemical Vapour Deposition (PECVD)

PECVD is a well established technique for deposition of a wide variety of films. Many types of device require PECVD to create high quality passivation or high density masks.

特点及优势
Hardware

- SiO_x, SiN_x and SiO_xN_y deposition for a wide range of applications including photonics structures, passivation, hard mask, etc.
- Amorphous silicon (a-Si:H)
- TEOS SiO₂ with conformal step coverage, or void-free good step coverage
- SiC
- Diamond-like carbon (DLC)Offers a wide range of material deposition, including:
Plasma cleaning process with end-point control removes or reduces need for physical/chemical chamber cleaning
Control over film stoichiometry via process conditions

	PlasmaPro 80	PlasmaPro 800	PlasmaPro 100	PlasmaPro 1000
Electrode size	240mm	460mm	240mm	490mm
Substrates	Up to 240mm diameter, multi-wafers or small pieces	Up to 460mm diameter, multi-wafers or small pieces	Up to 200mm diameter with carrier options available for multi-wafers or small pieces	Up to 490mm diameter with carrier options available for multi-wafers or small pieces
Dopants	No	No	Various dopants available which include PH<sub>3</sub>, B<sub>2</sub> H<sub>6</sub>, GeH<sub>4</sub>	Various dopants available which include PH<sub>3</sub>, B<sub>2</sub>H<sub>6</sub>, GeH<sub>5</sub>
Liquid Precursors	No		Yes: TEOS
MFC controlled gas lines	4, 8 or 12 line gas box available
RF Switching for Stress Control	Yes
Wafer stage temperature range	20°C to 400°C		Standard 20°C to 400°C with option for up to 1200°C	Standard 20°C to 400°C
Insitu plasma clean	Yes. Endpoint available to ensure optimum clean time

Website by Miramar Communications Ltd

Plasma Enhanced Chemical Vapour Deposition (PECVD)

要点

PECVD Systems