PECVD is a well established technique for deposition of a wide variety of films. Many types of device require PECVD to create high quality passivation or high density masks.
PlasmaPro 80 |
PlasmaPro 800 |
PlasmaPro 100 |
PlasmaPro 1000 | |
Electrode size |
240mm | 460mm | 240mm | 490mm |
Substrates | Up to 240mm diameter, multi-wafers or small pieces | Up to 460mm diameter, multi-wafers or small pieces | Up to 200mm diameter with carrier options available for multi-wafers or small pieces | Up to 490mm diameter with carrier options available for multi-wafers or small pieces |
Dopants | No | No | Various dopants available which include PH<sub>3</sub>, B<sub>2</sub> H<sub>6</sub>, GeH<sub>4</sub> | Various dopants available which include PH<sub>3</sub>, B<sub>2</sub>H<sub>6</sub>, GeH<sub>5</sub> |
Liquid Precursors | No | Yes: TEOS | ||
MFC controlled gas lines |
4, 8 or 12 line gas box available | |||
RF Switching for Stress Control | Yes | |||
Wafer stage temperature range | 20°C to 400°C | Standard 20°C to 400°C with option for up to 1200°C | Standard 20°C to 400°C | |
Insitu plasma clean | Yes. Endpoint available to ensure optimum clean time |