原子层沉积 (ALD) 是一种真正的纳米技术, 可以准确可靠地沉积仅几个纳米厚的超薄薄膜。等离子体可以实现出色的表面预处理, 控制薄膜性质以及作为种类广泛的沉积源。
ALD cycle for Al2O3 deposited using TMA and O2 plasma
Only step 3 varies between H2O for the thermal process or O2 plasma. As the ALD process deposits precisely one atomic layer in each cycle, complete control over the deposition process is obtained at the nanometre scale:
A. TMA chemisorption | B. TMA purge | C. O2 plasma | D. Short post plasma purge
Al2O3、HfO2、SiO2、TiO2、SrTiO3、Ta2O5、Gd2O3、ZrO2、Ga2O3、V2O5、Co3O4、ZnO、ZnO:Al、ZnO:B、In2O3:H、WO3、MoO3、Nb2O5、NiO、MgO、RuO2
除了具有热ALD的优点外,PEALD可以选择更多的化学气体或液体源从而进一步提高薄膜质量:
OpAL |
FlexAL | |
Loading | Open load |
Load lock or Cassette |
Substrates | Up to 200mm wafers & pieces directly on stage | Up to 200mm wafers handling and pieces on a carrier plate |
Bubbled liquid & solid precursors | Up to 4 plus water, ozone and gases | Up to 8 plus water, ozone and gases |
Max precursor source temperature | 200ºC | 200ºC |
MFC controlled gas lines with rapid delivery system; 1) thermal gas precursors (e.g. NH<sub>3</sub>, O<sub>2</sub>) 2) plasma gases (e.g. O<sub>2</sub>, N<sub>2</sub>, H<sub>2</sub>) | 2 internally. Up to 8 in externally mounted gas pod | Up to 10 in externally mounted gas pod |