High etch rates. High selectivity. Low damage processing. Excellent profile control. Independently-controlled substrate DC bias.

Simple and economical solution for plasma etching, chemical etching and ion-induced etching with applications including failure analysis.

Well-established technique for a wide variety of films, high-quality passivation and high density masks.

Unique range of flexibility and capability in the engineering of nanoscale structure, GaN HEMT and RF devices with clusterable options available.