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Gallium Phosphide 

Gallium Phosphide (GaP) is a compound with an indirect bandgap of 2.26eV. Due to its optical properties it has been used to make LEDs and other optoelectronics devices. It can be etched using Inductively Coupled Plasma (ICP), Reactive Ion Etching (RIE) or Ion Beam Etch (IBE).

More on ICP 了解更多信息
  • Wafer size: up to 100mm
  • Batch size: up to 6x2"
More on RIE 了解更多信息
  • Wafer size: up to 200mm  
More on IBE 了解更多信息

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