牛津仪器集团成员
扩展

Hafnium Nitride 

Hafnium Nitride (HfN) is a -k dielectric used for the gate insulator in integrated circuits. It may be deposited using Atomic Layer Deposition (ALD) giving quality and control over stoichiometry and resistivity.

  • Wafer size: up to 200mm
More on ALD 了解更多信息

相关产品

沪ICP备17031777号-1 公安机关备案号31010402003473