牛津仪器集团成员
扩展

Aluminium Gallium Arsenide

Aluminium Gallium Arsenide (AlGaAs) is commonly used in conjunction with Gallium Arsenide (GaAs) to form mirrors in optoelectronic devices such as VCSELs. It is also forms part of the Multi Wells (MQWs) that are key to the performance of many devices. AlGaAs may be dry etched using Inductively Coupled Plasma (ICP), Reactive Ion Etching (RIE) or Ion Beam Etch (IBE). Etch processes can be either selective or non-selective to GaAs depending on the requirements.

AlGaAs

Excellent profile with feature foot and smooth etched at etching rate. 

More on ICP 了解更多信息
GaAs/AlGaAs ICP Etching

GaAs/AlGaAs may be etched using the Reactive Ion Etching (RIE) process. Excellent profile with feature foot and smooth etched .

  • Single wafer size: up to 200mm
  • Batch size: up to 6x2"
More RIE 了解更多信息
GaAs/AlGaAs RIE

GaAs/AlGaAs multilayer etch

GaAs may be etched using the Reactive Ion Beam Etch (RIBE) process technique. 

Competitive etching rate, selectivity and profile.

More on RIBE 了解更多信息
GaAs RIBE

相关产品

沪ICP备17031777号-1 公安机关备案号31010402003473