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Tantalum Nitride (TaN)

Tantalum Nitride (TaN) can be used as a barrier layer between copper, or other conductive metals, and dielectric insulator films such as thermal oxides. TaN may be deposited using Atomic Layer Deposition (ALD) or etched using Ion Beam Etching (IBE), Inductively Coupled Plasma (ICP) and Reactive Ion Etching (RIE).


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